PART |
Description |
Maker |
M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70XL M |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Memory>Low Power SRAM
|
Renesas Electronics Corporation. Renesas Electronics, Corp. RENESAS[Renesas Electronics Corporation]
|
LC35256DM LC35256DT-10 LC35256DT-70 LC35256D-10 25 |
x8 SRAM Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM From old datasheet system
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M5256DFP-70VLL-W M5M5256DFP-85VXL-W M5M5256DRV-7 |
From old datasheet system Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5279-25 M5M5279-35 M5M5279-35L M5M5279J-20 M5M5 |
294912-BIT (32768-WORD BY 9-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
W24LH8S-55LI W24LH8 W24LH8Q-55LE W24LH8Q-55LI W24L |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits 32K X 8 STANDARD SRAM, 100 ns, PDSO28
|
Winbond Electronics, Corp. WINBOND[Winbond]
|
HN27C256AG-10 HN27C256AGSERIES |
32768-word x 8-bit UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
HN58C256ASERIES 58C256A |
32768-word ′ 8-bit Electrically Erasable and From old datasheet system
|
hitachi
|
HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit) Memory>Fast SRAM>Asynchronous SRAM
|
SRAM Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|